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Positron Annihilation Lifetime Spectroscopy System PALS-200A >>Contacts
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feature
Up to 5 samples, which can be measured automatically
Analysis software with easy operation
The control freely depth observation
Measured pore size is atomic-vacancy from 10nm
Low-damage, non-destructive

PALS-200A
 
   
 
 
Specification
Space occupied by the equipment:4.7mx3.2mx2.2m(H)
Positron source:Na-22 (max.activity 1GBq)
Positron beam energy:0.5〜15keV(variable)
Time resolution:<300ps
γ-ray counting rate:>500cps@1GBq
Measurement time:<1h/spectrum
 

   
Application
VLSI materials:
 Low-k dielectrics、High-k gate dielectrics、
 Cu barrier films、Electroplated Cu films、
 SIO、Strained Si、Ion-implanted Si
V-X、U-Y semiconductors:
 GaN、InN、ZnO、SiC、GaAs


Porous materials、Zeolite、Membranes、Polymer coating films (free volume)
 RO films、Gas barrier films、
 Mesoporous materials
 
 
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for available Product Brief (PDF)

 
 
Designed and developed by
Advanced Defect-Characterization Research Group, Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST)
 
 
     
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